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会切磁场约束ICP增强电离的非平衡磁控溅射薄膜沉积装置

Release Time:2019-03-09  Hits:

First Author: Chunsheng Ren

Disigner of the Invention: 王友年,Wang Dezhen,张家良

Application Number: CN200910010112.4

Authorization Date: 2009-01-13

Authorization Number: CN101476110

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