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会切磁场约束ICP增强电离的非平衡磁控溅射薄膜沉积装置

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First Author:Chunsheng Ren

Disigner of the Invention:zhangjialiang,Wang Dezhen,wangyounian

Application Number:CN200910010112.4

Authorization Date:2009-01-13

Authorization number:CN101476110

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