Hits:
First Author:聂秋月
Disigner of the Invention:Chunsheng Ren,Wang Dezhen
Application Number:CN200810010904.7
Authorization Date:2008-03-31
Authorization number:CN101252805
Pre One:用直流辉光放电在细长金属管内壁沉积类金刚石膜的方法
Next One:会切磁场约束ICP增强电离的非平衡磁控溅射薄膜沉积装置