刘贵昌

个人信息Personal Information

教授

博士生导师

硕士生导师

性别:男

毕业院校:大连理工大学

学位:博士

所在单位:化工学院

学科:化学工程. 水科学与技术

办公地点:西部校区化工综合楼A503

联系方式:gchliu@dlut.edu.cn

电子邮箱:gchliu@dlut.edu.cn

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Studies of diamond-like carbon (DLC) films deposited on stainless steel substrate with Si/SiC intermediate layers

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论文类型:期刊论文

发表时间:2008-08-01

发表刊物:CHINESE PHYSICS B

收录刊物:SCIE、EI、CSCD、Scopus

卷号:17

期号:8

页面范围:3108-3114

ISSN号:1674-1056

关键字:diamond-like carbon (DLC); stainless steel substrate; intermediate layers

摘要:In this work, diamond-like carbon (DLC) films were deposited on stainless steel substrates with Si/SiC intermediate layers by combining plasma enhanced sputtering physical vapour deposition (PEUMS-PVD) and microwave electron cyclotron resonance plasma enhanced chemical vapour deposition (MW-ECRPECVD) techniques. The influence of substrate negative self-bias voltage and Si target power on the structure and nano-mechanical behaviour of the DLC films were investigated by Raman spectroscopy, nano-indentation, and the film structural morphology by atomic force microscopy (AFM). With the increase of deposition bias voltage, the G band shifted to higher wave-number and the integrated intensity ratio I(D)/I(G) increased. We considered these as evidences for the development of graphitization in the films. As the substrate negative self-bias voltage increased, particle bombardment function was enhanced and the sp(3)-bond carbon density reducing, resulted in the peak values of hardness (H) and elastic modulus (E). Silicon addition promoted the formation of sp(3) bonding and reduced the hardness. The incorporated Si atoms substituted Sp(2)- bond carbon atoms in ring structures, which promoted the formation of sp(3)-bond. The structural transition from C-C to C-Si bonds resulted in relaxation of the residual stress which led to the decrease of internal stress and hardness. The results of AFM indicated that the films was dense and homogeneous, the roughness of the films was decreased due to the increase of substrate negative self-bias voltage and the Si target power.