Release Time:2019-03-10  Hits:

Indexed by: Journal Article

Date of Publication: 2007-02-01

Journal: RARE METALS

Included Journals: CSCD、EI、SCIE

Volume: 26

Issue: 1

Page Number: 13-18

ISSN: 1001-0521

Key Words: silicon wafers; grinding; subsurface damage; microstructure

Abstract: The depth and nature of the subsurface damage in a silicon wafer will limit the performance of IC components. Damage microstructures of the silicon wafers ground by the #325, #600, and #2000 grinding wheels was analyzed. The results show that many microcracks, fractures, and dislocation rosettes appear in the surface and subsurface of the wafer ground by the #325 grinding wheel. No obvious microstructure change exists. The amorphous layer with a thickness of about 100 nm, microcracks, high density dislocations, and polycrystalline silicon are observed in the subsurface of the wafer ground by the #600 grinding wheel. For the wafer ground by the #2000 grinding wheel, an amorphous layer of about 30 nm thickness, a polycrystalline silicon layer, a few dislocations, and an elastic deformation layer exist. In general, with the decrease in grit size, the material removal mode changes from micro-fracture mode to ductile mode gradually.