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Indexed by:期刊论文

Date of Publication:2012-03-01

Journal:PLASMA SCIENCE & TECHNOLOGY

Included Journals:SCIE、EI、Scopus

Volume:14

Issue:3

Page Number:240-244

ISSN No.:1009-0630

Key Words:ion behavior; plasma sheath; Monte-Carlo; rf; photoresist trench

Abstract:Ion's behavior plays an important role in plasma etching processes and is determined by the local electric potential in the etched trenches. In this study, with the trench powered by a radio frequency (rf) source, the Laplace equation is solved to obtain the electric potential. The ion trajectories and the ion energy distribution (IED) at the bottom of the trench are obtained self-consistently by tracking the ions in the trench. The results show that the aspect ratio of depth- to-width of the photoresist trench and the voltage amplitude of the rf source applied to the electrode are important parameters. The larger the aspect ratio and the smaller the amplitude are, the more ions hit the sidewalls, which results in a notching phenomenon. Meanwhile, there are a higher high-energy peak and a lower low-energy peak in the IED with the increase in aspect ratio.