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论文类型：期刊论文

发表时间：2012-01-01

发表刊物：PLASMA SCIENCE & TECHNOLOGY

收录刊物：SCIE、EI、Scopus

卷号：14

期号：1

页面范围：64-70

ISSN号：1009-0630

关键字：profile evolution; RF bias; reflection; etching yield

摘要：We have developed a plasma etching simulator to investigate the evolution of pattern profiles in SiO2 material under different plasma conditions. This model focuses on energy and angular dependent etching yield (physical sputtering in this paper), neutral and ion angular distributions, and reflection of ions or neutrals on the surface of a photoresist or SiO2. The effect of positive charge accumulation on the surface of insulated mask or SiO2 is studied and the charge accumulation contributes to a deflection of ion trajectory. The wafer profile evolution has been simulated using a cellular-automata-like method under radio-frequency (RF) bias and direct-current (DC) bias, respectively. On the basis of the critical role of angular distribution of ions or neutrals, the wafer profile evolution has been simulated for different variances of angles. Observed microtrenching has been well reproduced in the simulator. The ratio of neutrals to ions has been considered and the result shows that because the neutrals are not accelerated by an electric field, their energy is much lower compared with ions, so they are easily reflected on the surface of SiO2, which makes the trench shallower.