点击次数：

发布时间：2019-03-09

论文类型：期刊论文

发表时间：2011-10-01

发表刊物：PLASMA SCIENCE & TECHNOLOGY

收录刊物：EI、SCIE、Scopus

卷号：13

期号：5

页面范围：567-570

ISSN号：1009-0630

关键字：non-thermal plasma; atmospheric pressure; polysilicon; optical emission spectrum

摘要：Non-thermal plasma at atmospheric pressure was explored for the preparation of polysilicon from SiCl4. The power supply sources of positive pulse and alternating current (8 kHz and 100 kHz) were compared for polysilicon preparation. The samples prepared by using the 100 kHz power source were crystalline silicon. The effects of H-2 and SiCl4 volume fractions were investigated. The optical emission spectra showed that silicon species played an important role in polysilicon deposition