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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：复旦大学
学位：博士
所在单位：物理学院
学科：凝聚态物理
办公地点：大连理工大学三束材料改性重点实验室1号楼203房间
联系方式：qyzhang@dlut.edu.cn 0411-84707930 转 13
电子邮箱：qyzhang@dlut.edu.cn
Defects in low nitrogen-doped highly oriented diamond film grown by microwave plasma-assisted chemical vapor deposition
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论文类型：期刊论文
发表时间：2008-01-01
发表刊物：SCRIPTA MATERIALIA
收录刊物：SCIE、EI
卷号：58
期号：2
页面范围：103-105
ISSN号：1359-6462
关键字：CVD; carbon; dislocation; transmission electron microscopy
摘要：A diamond film was deposited using a two-step process in which nitrogen is added during the second step. We compare the defects in {001} and {111} growth sectors from the two-steps: dislocation loops found in {001} growth sectors of the first step disappear in {001} growth sectors with N-doping, whereas the density of planar defects in {111} growth sectors strongly increases. It is suggested that N-doping stops vacancies from aggregating to form dislocation loops or vacancy clusters. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.