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论文类型：会议论文

发表时间：2009-01-05

收录刊物：EI、CPCI-S、SCIE、Scopus

页面范围：286-+

关键字：Dielectric losses; Force; Microsesnsors; PZT thin films

摘要：Pb1-xSrx (Zr0.53Ti0.47) O-3 (PSZT) thin films have been fabricated on Pt/Ti/SiO2/Si substrates by a sot-gel method combined with a rapid thermal annealing process. It is shown that the introduction of Sr2+ into the PZT thin films favors the growth of (111) orientation. The orientation ratio of (111) is increased from 0.304, 0.475 to 0.849 with the increase of the x value. The dielectric measurement results indicates that the addition of Sr2+ in the PZT thin films greatly improves the dielectric properties of the PZT thin films. Two kinds of the PSZT0.03 thin films with thickness of 1.68um and 2.19um were fabricated and tested for the same structure size, and the spring constant of 11.72N/m and 4.87N/m is obtained, respectively. The PSZT thin films with x=0, 0.03, 0.08 have an spring constant of 13.73N/m, 11.72N/m and 8.16N/m, respectively. Three kinds of the PSZT thin films for the microforce sensors were tested in quasi static state, the sensing sensitivity of the three kinds of microforce sensors are 0.017pc/uN, 0.033pc/uN, and 0.011pc/uN, respectively. The sensing sensitivity of the microforce sensors is 0.033pc/uN and 0.077pc/uN while thickness of PSZT0.03 thin films is 1.68um and 2.19um.