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论文类型：会议论文

发表时间：2008-11-19

收录刊物：EI、CPCI-S、SCIE、Scopus

卷号：60-61

页面范围：246-+

关键字：micro-force sensor; sr-doped PZT; dielectric property; spring constant; force sensitivity

摘要：Pb1-xSrx (Zr0.53Ti0.47) O-3 (PSZT) thin films have been fabricated on Pt/Ti/SiO2/Si substrate by a sol-gel method combined with a rapid thermal annealing process. The microstructure analysis of : the thin films showed that the orientation ratio of (111) was 0.304, 0.475 and 0.849 with x = 0, 0.03, 0.08. The dielectric measurement suggested that the addition of Sr in Pb(Zr0.53Ti0.47) O-3(PZT) thin films greatly improved the dielectric properties of PZT thin Films. The dielectric constant for PZT thin films at a frequency of 2 kHz was 648, which was increased to 1239 when 3%at Sr was doped. Meanwhile, the dissipation factor was only increased from 0.02 to 0.03, Three kinds of piezoelectric micro-sensors have been prepared based on PSZT thin films and the sensing sensitivity of 0.017pc/uN, 0.033pc/uN, and 0.01 pc/uN were realized as x increased. respectively. It indicated that micro-sensors with PSZT0.03 thin films showed better sensing property than other two.