孙长森

个人信息Personal Information

教授

博士生导师

硕士生导师

性别:男

毕业院校:大连理工大学

学位:博士

所在单位:光电工程与仪器科学学院

联系方式:辽宁省大连市高新园区凌工路2号邮编116023

电子邮箱:suncs@dlut.edu.cn

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An Axonal Model for Analysis of Ionic Concentration Alterations Induced by High Frequency Electrical Stimulations

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论文类型:会议论文

发表时间:2016-01-01

收录刊物:SCIE、CPCI-S

页面范围:1680-1684

关键字:axon model; ionic concentration; high frequency; electrical stimulation; conduction block

摘要:The nerve conduction blocking by high frequency biphasic (HFB) electrical stimulations has many potentially valuable clinical applications, but its safety margins require further evaluations. This simulation study aimed to construct an axonal model to investigate the effects of HFB electrical currents on the axonal conductibility and ionic concentrations. The axonal model was constructed in the software of NEURON by incorporating the McIntyre-Richardson-Grill model's geometries, Frankenhaeuser-Huxley and passive equations, ionic diffusion mechanism, and sodium pump activities. The applied 5 s HFB electrical stimulation apparently altered the axon's conductibility, which manifested lowered AP amplitudes, elevated resting membrane potentials, and delayed AP initiation times. These changes did not gain complete recoveries within the observed 55 s period, and showed to be mainly attributed to the induced alterations in ionic concentrations of nodal [Na+](i), nodal [K+](i) and para-nodal [Na+](o). The results implied that the inter-nodal segments played a buffering role against changes of intracellular nodal ionic concentrations, and the intra-cellular ionic concentrations recovered at the price of increases in para-nodal [Na+](o). This study provided more information useful for evaluating the safety margins of nerve conduction blocking by HFB electrical stimulations, and are valuable for designing more safe and applicable protocols.