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Effect of europium doping on electrical properties of PZT films

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Indexed by:期刊论文

Date of Publication:2008-02-01

Journal:2nd International Symposium on Functional Materials

Included Journals:SCIE、CPCI-S

Volume:15

Issue:1-2

Page Number:1-5

ISSN No.:0218-625X

Key Words:PZT film; Eu doped; ferroelectric; leakage current

Abstract:Samples of lead zirconate titanate Pb(Zr0.53Ti0.47)O-3 with europium (Eu) doping concentration of 0, 0.5, 1.5, 3mol% (PEZT) were fabricated by sol-gel method. XRD spectra showed that the introduction of Eu into PZT favored the growth of (100) orientation. With 3% Eu content, the preferential orientation of the film converted from (111) to (100) orientation. The Eu-doped PZT films exhibited lower leakage current less than 10(-9) A/cm(2) and the behavior of leakage current was discussed in terms of defect chemistry theorem. When Eu content was 1.5%, the remanent polarization (P-r) increased to 28 mu C/cm(2) which was much higher than that of undoped PZT film.

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