会切磁场约束ICP增强电离的非平衡磁控溅射薄膜沉积装置
Release Time:2022-10-20 Hits:
First Author: Chunsheng Ren
Disigner of the Invention: 张家良,Wang Dezhen,王友年
Institution: 物理学院
Application Number: CN101476110
Authorization Number: CN200910010112.4
Release Time:2022-10-20 Hits:
First Author: Chunsheng Ren
Disigner of the Invention: 张家良,Wang Dezhen,王友年
Institution: 物理学院
Application Number: CN101476110
Authorization Number: CN200910010112.4