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High-temperature three-dimensional GaN-based hall sensors for magnetic field detection

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Indexed by:期刊论文

Date of Publication:2021-03-26

Journal:JOURNAL OF PHYSICS D-APPLIED PHYSICS

Volume:54

Issue:7

Page Number:75003-

Pre One:Improvement on synaptic properties of WOx-based memristor by doping Ti into WOx

Next One:Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors
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