HbfOuykJWXjqrjnYwTAC4HycyM80VZzfjZ9o0tPqHLu819cek4iBlKQQE6jR
Current position: Home >> Scientific Research >> Paper Publications

High-temperature three-dimensional GaN-based hall sensors for magnetic field detection

Release Time:2021-03-31  Hits:

Indexed by: Journal Article

Date of Publication: 2021-03-26

Journal: JOURNAL OF PHYSICS D-APPLIED PHYSICS

Volume: 54

Issue: 7

Page Number: 75003-

Prev One:Improvement on synaptic properties of WOx-based memristor by doping Ti into WOx

Next One:Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors
Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep