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Associate Professor Supervisor of Master's Candidates

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liuyanhong, 王俞升, 王春霞, Kun Liu, chengchuanhui, Wenqi Lu, huanghuolin.Improvement on synaptic properties of WOx-based memristor by doping Ti into WOx[J],Journal of Physics D: Applied Physics,2021,54(8)
huanghuolin, 张卉, 曹亚庆, liuyanhong, 马凯鸣, Kun Liu, Yung C. Liang.High-temperature three-dimensional GaN-based hall sensors for magnetic field detection[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2021,54(7):75003-
孙仲豪, huanghuolin, 王荣华, liuyanhong, 孙楠, 李飞雨, taopengcheng, 任永硕等.Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2021,54(2):25109-
孙仲豪, huanghuolin, liuyanhong, 尹伊安, Qin Kairong, taopengcheng, Kun Liu, 孙楠, Yung C. Liang.A Novel Analytical Model for Ohmic Contacts to Planar Devices: Theoretical Design and Experimental Verification[J],IEEE TRANSACTIONS ON ELECTRON DEVICES,2021,68(1):299-306
liuyanhong, 王春霞, 李忠岳, 王俞升, Wenqi Lu, huanghuolin.Effects of W/ WO3-x junction on synaptic characteristics of W/WO3-x/ ITO memristor[J],Physica E: Low-dimensional Systems and Nanostructures 127 (2021) 114515,2021,127:114515-
Liu, Yanhong, Wang, Ruoying, Li, Zhongyue, Song, Huang, Yang, Peng, Wei, YH (reprint author), Dalian Univ Technol, Sch Phys, 2 Linggong Rd, Dalian 116024, Peoples R China..Non-switching to switching transferring mechanism investigation for Ag/SiOx/p-Si structure with SiOx deposited by HWCVD[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2018,51(16)

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