Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2010-05-03

Journal: APPLIED PHYSICS LETTERS

Included Journals: EI、SCIE

Volume: 96

Issue: 18

ISSN: 0003-6951

Key Words: annealing; carbon; copper alloys; doping; electrical resistivity; grain growth; metallic thin films; sputter deposition; thermal stability

Abstract: Interfacial structures and electrical resistivities of a carbon-doped Cu film at different annealing temperatures and times were investigated. The film was prepared by magnetron sputtering on barrierless silicon. After annealing, grain growth was distinctly hindered and a carbon-containing nanometer thick passive amorphous layer was formed at the film/substrate interface. The film had a resistivity of about 2.7 mu cm after annealing at 400 degrees C for 1 h and maintained a low resistivity of 3.8 mu cm even after 9 h annealing at 400 degrees C. The low electrical resistivity in combination with the high thermal stability makes carbon doping a promising technique for future Cu interconnects on barrierless Si. (C) 2010 American Institute of Physics. [doi:10.1063/1.3427408]