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一种可变带隙的Fe-B-Si三元半导体非晶薄膜及其制备方法

Release Time:2019-03-09  Hits:

First Author: 李晓娜

Disigner of the Invention: 董闯,郑月红

Application Number: CN201310016110.2

Authorization Date: 2013-01-17

Authorization Number: CN103046000A

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