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高热稳定性和低电阻率C掺杂Cu薄膜的制备方法

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First Author:lixiaona

Disigner of the Invention:聂利飞,dongchuang

Authorization Date:2009-12-26

Authorization number:ZL200910312326.7

Pre One:Thin film of Cu-Ni-Mo alloy and method for manufacturing the same

Next One:低电阻率高热稳定性的Cu-Ni-Mo合金薄膜及其制备工艺
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