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论文类型：期刊论文

发表时间：2011-03-15

发表刊物：MATERIALS CHEMISTRY AND PHYSICS

收录刊物：Scopus、SCIE、EI

卷号：126

期号：1-2

页面范围：31-35

ISSN号：0254-0584

关键字：Humidity sensor; Y3+ and Mg2+ doped zirconia; Thick films

摘要：Y3+-doped and Mg2+-doped zirconia thick film humidity sensors were investigated. The humidity sensors exhibited good sensing characteristics. The sensor got a high sensitivity with the impendence changed five orders of magnitude from 10(8) to 10(3) Omega in the relative humidity (RH) range of 11-98% at 20 degrees C. The response time is about 30s for Y3+ doped sensor, and 5 s for Mg2+ doped one, and recovery time is 5 s for both sensors. Small humidity hysteresis is about 3% RH and 4% RH for Y3+ and Mg2+ doped ZrO2 sensors, respectively. Moreover, good repeatability, linearity and temperature properties of the both sensors were also exhibited. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and defect structure were used to analyze the influence of dopant on humidity sensitive properties. And the mechanism of humidity sensing properties was also discussed. (C) 2010 Elsevier B.V. All rights reserved.