Release Time:2019-03-11  Hits:

Indexed by: Journal Article

Date of Publication: 2017-10-01

Journal: Energy Technology

Included Journals: CPCI-S、EI、SCIE、Scopus

Volume: 5

Issue: 10

Page Number: 1836-1843

ISSN: 21944288

Key Words: copper iodide; hole-transporting layer; perovskites; solar cells; solid-gas reaction

Abstract: The inorganic p-type semiconductor CuI possesses several unique characteristics such as high transparency, low-production cost, high hole mobility, and good chemical stability and is a promising hole-transporting material candidate that can be explored in solar-cell devices. Herein, we adopt a simple solid Cgas reaction method to fabricate a uniform CuI film by exposing a thermally evaporated copper film to iodine vapor and apply it as a hole-transporting layer (HTL) in inverted planar perovskite solar cells (PSCs). The optimized devices display a promising power conversion (PCE) efficiency of 14.7 %, with an open-circuit voltage of 1.04 V, a short-circuit current density of 20.9 mW cm?2, and a fill factor of 0.68. This is one of the highest PCE values reported so far for CuI-based HTL in PSCs. Moreover, the devices studied also exhibit good long-term stability at ambient atmosphere, arising from the hydrophobicity of CuI HTL. The results highlight that CuI fabricated using the simple and low-temperature processing method presented here holds great promise as low-cost alternative HTL material for the development of efficient and stable inverted planar PSCs in the future. ? 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim