Renke Kang
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A novel single step thinning process for extremely thin Si wafers
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Indexed by:期刊论文

Date of Publication:2009-09-27

Journal:Advanced Materials Research

Included Journals:EI、CPCI-S、SCIE、Scopus

Volume:76-78

Page Number:434-439

ISSN No.:087849314X

Key Words:Silicon wafer; Grinding; Thinning; CMG; ICGW

Abstract:The demand for extremely-thin Si wafers is expanding. Current manufacturing technologies are meeting great challenges with the continuous decrease in Si wafer thickness. In this study, a novel single step thinning process for extremely thin Si wafers was put forward by use of an integrated cup grinding wheel (ICGW) in which diamond segments and chemo-mechanical grinding (CMG) segments are alternately allocated along the wheel periphery. The basic machining principle and key technologies were introduced in detail. Grinding experiments were performed on 8-in. Si wafers with a developed ICGW to explore the minimal wafer thickness and grinding performance. The experimental results indicate that the proposed grinding process with the ICGW is an available thinning approach for extremely thin Si wafer down to 15μm.

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Title : 国际磨粒技术学会(International Committee of Abrasive Technology, ICAT)委员,中国机械工程学会极端制造分会副主任、生产工程分会常务委员、微纳米制造技术分会常务委员,中国机械工程学会生产工程分会磨粒加工技术专业委员会副主任、切削加工专业委员会常委委员、精密工程与微纳技术专业委员会常委委员,中国机械工程学会特种加工分会超声加工技术委员会副主任,中国机械工程学会摩擦学分会微纳制造摩擦学专业委员会常务委员,中国机械工业金属切削刀具协会切削先进制造技术研究会常务理事、对外学术交流工作委员会副主任、切削先进制造技术研究会自动化加工技术与系统委员会副主任。

Gender:Male

Alma Mater:西北工业大学

Degree:Doctoral Degree

School/Department:机械工程学院

Discipline:Mechanical Manufacture and Automation. Mechatronic Engineering. Manufacturing Engineering of Aerospace Vehicle

Business Address:机械工程学院7191

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