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A Method to Improve Uniformity of Material Removal of Chemical Mechanical Polishing in LCOS Process

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Indexed by:期刊论文

Date of Publication:2008-01-01

Journal:Key Engineering Materials

Volume:364

Issue:366

Page Number:686-689

Pre One:Analyzing on Nonuniformity of Material Removal in Silicon Wafer CMP Based on Abrasive Movement Trajectories

Next One:Theoretical analysis and experimental verification of triangular fracture defects of MgO single crystal substrate in lapping or polishing process
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