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Indexed by:期刊论文

Date of Publication:2017-08-01

Journal:INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY

Included Journals:SCIE、EI、Scopus

Volume:91

Issue:9-12

Page Number:3315-3326

ISSN No.:0268-3768

Key Words:Si wafer; Diamond wheel; CeO2; Amorphous layer; Transmission electron microscopy

Abstract:A novel approach of high-performance grinding is proposed using developed diamond wheels, to obtain minimally damaged surface layer in silicon wafers. For this reason, resin bond diamond wheels are specifically developed with lanthanum oxide (La2O3), magnesium oxide (MgO), and ceria (CeO2) as additives, respectively. The wheels contain grains with a mesh number of 20,000 and a volume fraction of diamond grains of 37.5%. The diamond wheel with ceria additives demonstrates the best grinding performance in terms of surface integrity and roughness. It allows to generate an amorphous surface layer of 43 nm in thickness, without grinding damage beneath in a silicon wafer. This is different from previous reports, in which an amorphous layer is at the top, followed by a damaged crystalline layer underneath induced by a diamond wheel. Below the amorphous layer is the pristine crystalline lattice, which is confirmed using the high-resolution transmission electron microscopy (HRTEM). The ceria wheel results in a surface roughness R (a) of 0.88 nm and a peak-to-valley (PV) value of 8.3 nm over an area of 70 x 50 mu m(2) on a Si wafer at a feed rate of 15 mu m/min.