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个人信息Personal Information
教授
博士生导师
硕士生导师
任职 : 国际磨粒技术学会（International Committee of Abrasive Technology, ICAT）委员，中国机械工程学会极端制造分会副主任、生产工程分会常务委员、微纳米制造技术分会常务委员，中国机械工程学会生产工程分会磨粒加工技术专业委员会副主任、切削加工专业委员会常委委员、精密工程与微纳技术专业委员会常委委员，中国机械工程学会特种加工分会超声加工技术委员会副主任，中国机械工程学会摩擦学分会微纳制造摩擦学专业委员会常务委员，中国机械工业金属切削刀具协会切削先进制造技术研究会常务理事、对外学术交流工作委员会副主任、切削先进制造技术研究会自动化加工技术与系统委员会副主任。
性别：男
毕业院校：西北工业大学
学位：博士
所在单位：机械工程学院
学科：机械制造及其自动化. 机械电子工程. 航空宇航制造工程
办公地点：机械工程学院7191
电子邮箱：kangrk@dlut.edu.cn
Nanogrinding induced surface and deformation mechanism of single crystal beta-Ga2O3
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论文类型：期刊论文
发表时间：2018-06-01
发表刊物：MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
收录刊物：SCIE、EI
卷号：79
页面范围：165-170
ISSN号：1369-8001
关键字：beta-Ga2O3; Nanogrinding; Transmission electron microscopy (TEM); Defects; Nanoidentation
摘要：Surface and deformation characteristics of single crystal beta-Ga2O3 under nanogrinding were investigated using nanoindentation and transmission electron microscopy. Nanocrystals, stacking faults, twins and dislocations were the main deformation patterns found in the grinding of this semiconductor crystal. An amorphous phase was found when the specific grinding energy was significantly high, which was initiated behind the occurrence of other defects. The occurrence sequence of defects is somehow different from that of other semiconductors such as silicon, germanium and gallium arsenide. The hardness of grinding-induced deformed layer was higher than that of the perfect beta-Ga2O3 crystal. The thickness and hardness of the defect layer were both reduced when a finer grit size was used. The mechanism responsible for deformation was found to be related to the intrinsic stacking fault energy of beta-Ga2O3 and the specific grinding energy being used.