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个人信息Personal Information
教授
博士生导师
硕士生导师
任职 : 国际磨粒技术学会（International Committee of Abrasive Technology, ICAT）委员，中国机械工程学会极端制造分会副主任、生产工程分会常务委员、微纳米制造技术分会常务委员，中国机械工程学会生产工程分会磨粒加工技术专业委员会副主任、切削加工专业委员会常委委员、精密工程与微纳技术专业委员会常委委员，中国机械工程学会特种加工分会超声加工技术委员会副主任，中国机械工程学会摩擦学分会微纳制造摩擦学专业委员会常务委员，中国机械工业金属切削刀具协会切削先进制造技术研究会常务理事、对外学术交流工作委员会副主任、切削先进制造技术研究会自动化加工技术与系统委员会副主任。
性别：男
毕业院校：西北工业大学
学位：博士
所在单位：机械工程学院
学科：机械制造及其自动化. 机械电子工程. 航空宇航制造工程
办公地点：机械工程学院7191
电子邮箱：kangrk@dlut.edu.cn
Chemical-mechanical wear of monocrystalline silicon by a single pad asperity
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论文类型：期刊论文
发表时间：2017-09-01
发表刊物：INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE
收录刊物：SCIE、EI、Scopus
卷号：120
页面范围：61-71
ISSN号：0890-6955
关键字：Chemical-mechanical polishing; Pad asperity; Removal mechanism; Chemical bonds
摘要：Chemical mechanical polishing (CMP) processes have been widely used in many fields with the ability to obtain an ultra-smooth surface. However, a comprehensive understanding of the material removal mechanisms at single pad asperity scale is still lacking, where a large number of abrasive particles are entrapped in the pad asperity/wafer microcontact area and then participate into polishing. In this study, two different pad asperity scale material removal models are derived based on the indentation-sliding mechanism and chemical bond removal mechanism, respectively. Furthermore, series of pad asperity scale polishing tests are conducted on monocrystalline silicon wafer surface by using a polyoxymethylene (Pom) ball to mimic a single pad asperity. The results show that under the asperity-scale, material removal is highly related to the chemical reaction time between sequential asperity-wafer interactions, indicating the chemical control of the removal rate by controlling the reacted layer thickness. In particular, it is found that the reacted layer thickness follows the diffusion equation, and atoms within not only the topmost surface layer, but also the next or deeper layer can participate in the chemical reaction. Material removal behavior can be well explained by the dynamic formation and breakage of the interfacial chemical bonds between the Si atoms and SiO2 particles, rather than the indentation-sliding mechanism. It is further confirmed that no damage, such as lattice distortion or dislocation, is found in the subsurface of a wafer by the high-resolution transmission electron microscopy (HRTEM). This study provides new insights into the material removal mechanisms in CMP at an asperity-scale.