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个人信息Personal Information
教授
博士生导师
硕士生导师
任职 : 国际磨粒技术学会（International Committee of Abrasive Technology, ICAT）委员，中国机械工程学会极端制造分会副主任、生产工程分会常务委员、微纳米制造技术分会常务委员，中国机械工程学会生产工程分会磨粒加工技术专业委员会副主任、切削加工专业委员会常委委员、精密工程与微纳技术专业委员会常委委员，中国机械工程学会特种加工分会超声加工技术委员会副主任，中国机械工程学会摩擦学分会微纳制造摩擦学专业委员会常务委员，中国机械工业金属切削刀具协会切削先进制造技术研究会常务理事、对外学术交流工作委员会副主任、切削先进制造技术研究会自动化加工技术与系统委员会副主任。
性别：男
毕业院校：西北工业大学
学位：博士
所在单位：机械工程学院
学科：机械制造及其自动化. 机械电子工程. 航空宇航制造工程
办公地点：机械工程学院7191
电子邮箱：kangrk@dlut.edu.cn
Residual Stress Distribution in Silicon Wafers Machined by Rotational Grinding
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论文类型：期刊论文
发表时间：2017-08-01
发表刊物：JOURNAL OF MANUFACTURING SCIENCE AND ENGINEERING-TRANSACTIONS OF THE ASME
收录刊物：SCIE、EI、Scopus
卷号：139
期号：8
ISSN号：1087-1357
关键字：grinding; subsurface damage; silicon; residual stress; load identification
摘要：Subsurface damage (SSD) and grinding damage-induced stress (GDIS) are a focus of attention in the study of grinding mechanisms. Our previous study proposed a load identification method and analyzed the GDIS in a silicon wafer ground (Zhou et al., 2016, "A Load Identification Method for the GDIS Distribution in Silicon Wafers,"Int. J. Mach. Tools Manuf., 107, pp. 1-7.). In this paper, a more concise method for GDIS analysis is proposed. The new method is based on the curvature analysis of the chip deformation, and a deterministic solution of residual stress can be derived out. Relying on the new method, this study investigates the GDIS distribution feature in the silicon wafer ground by a #600 diamond wheel (average grit size 24 mu m). The analysis results show that the two principal stresses in the damage layer are closer to each other than that ground by the # 3000 diamond wheel (average grit size 4 mu m), which indicates that the GDIS distribution feature in a ground silicon wafer is related to the depth of damage layer. Moreover, the GDIS distribution presents a correlation with crystalline orientation. To clarify these results, SSD is observed by transmission electron microscopy (TEM).It is found that the type of defects under the surface is more diversified and irregular than that observed in the silicon surface ground by the # 3000 diamond wheel. Additionally, it is found that most cracks initiate and propagate along the slip plane due to the high shear stress and high dislocation density instead of the tensile stress which is recognized as the dominant factor of crack generation in a brittle materials grinding process.