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个人信息Personal Information
教授
博士生导师
硕士生导师
任职 : 国际磨粒技术学会（International Committee of Abrasive Technology, ICAT）委员，中国机械工程学会极端制造分会副主任、生产工程分会常务委员、微纳米制造技术分会常务委员，中国机械工程学会生产工程分会磨粒加工技术专业委员会副主任、切削加工专业委员会常委委员、精密工程与微纳技术专业委员会常委委员，中国机械工程学会特种加工分会超声加工技术委员会副主任，中国机械工程学会摩擦学分会微纳制造摩擦学专业委员会常务委员，中国机械工业金属切削刀具协会切削先进制造技术研究会常务理事、对外学术交流工作委员会副主任、切削先进制造技术研究会自动化加工技术与系统委员会副主任。
性别：男
毕业院校：西北工业大学
学位：博士
所在单位：机械工程学院
学科：机械制造及其自动化. 机械电子工程. 航空宇航制造工程
办公地点：机械工程学院7191
电子邮箱：kangrk@dlut.edu.cn
Atomistic mechanisms of Cu CMP in aqueous H2O2: Molecular dynamics simulations using ReaxFF reactive force field
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论文类型：期刊论文
发表时间：2018-12-01
发表刊物：COMPUTATIONAL MATERIALS SCIENCE
收录刊物：SCIE、Scopus
卷号：155
页面范围：476-482
ISSN号：0927-0256
关键字：Copper; Chemical mechanical polishing (CMP); ReaxFF reactive force field; Polishing pressure
摘要：Molecular dynamics simulations using ReaxFF reactive force field are employed to study the process of the silica abrasive particle sliding on the Cu(1 0 0) substrate in the aqueous H2O2 in order to clarify the atomistic mechanisms of the Cu chemical mechanical polishing process. Results reveal that there are mainly Cu-H2O, OH-Cu-OH, Cu-OH-Cu, Cu-OH-H2O, O-Cu-OH etc on the substrate, among them, the number of Cu-H2O is the most. And a part of H2O and OH in the above product come from H2O, some from H2O2, and the other are from the recombination of these two types molecule. Under the mechanical sliding effects, Cu atoms are mainly removed in the form of clusters by fracturing of Cu-Cu bonds and Cu-O bonds on the Cu substrate. When the polishing pressure is different, the more Cu atoms are removed, the greater the friction force between the abrasive particles and the substrate and the more H2O molecules are decomposed as the polishing pressure increases. Besides, H2O plays a dual effect by oxidizing the Cu substrate surface as well as by the effect of lubrication. Our results may shed light on the removal mechanism of Cu atoms in the CMP process at the atomic level and help to further understand the CMP of Cu.