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个人信息Personal Information
教授
博士生导师
硕士生导师
任职 : 国际磨粒技术学会（International Committee of Abrasive Technology, ICAT）委员，中国机械工程学会极端制造分会副主任、生产工程分会常务委员、微纳米制造技术分会常务委员，中国机械工程学会生产工程分会磨粒加工技术专业委员会副主任、切削加工专业委员会常委委员、精密工程与微纳技术专业委员会常委委员，中国机械工程学会特种加工分会超声加工技术委员会副主任，中国机械工程学会摩擦学分会微纳制造摩擦学专业委员会常务委员，中国机械工业金属切削刀具协会切削先进制造技术研究会常务理事、对外学术交流工作委员会副主任、切削先进制造技术研究会自动化加工技术与系统委员会副主任。
性别：男
毕业院校：西北工业大学
学位：博士
所在单位：机械工程学院
学科：机械制造及其自动化. 机械电子工程. 航空宇航制造工程
办公地点：机械工程学院7191
电子邮箱：kangrk@dlut.edu.cn
On the reaction mechanism of a hydroxyethylidene diphosphonic acid-based electrolyte for electrochemical mechanical polishing of copper
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论文类型：期刊论文
发表时间：2019-06-01
发表刊物：ELECTROCHEMISTRY COMMUNICATIONS
收录刊物：SCIE、EI
卷号：103
页面范围：48-54
ISSN号：1388-2481
关键字：Hydroxyethylidene diphosphonic acid; Electrochemical mechanical polishing; Copper; Reaction mechanism
摘要：In the electrochemical mechanical polishing (ECMP) of copper, hydroxyethylidene diphosphonic acid (HEDP) can work with other water treatment agents to suppress electrolysis and smooth the metal surface. According to Faraday's law, a conventional operating potential lower than 4 V vs. SCE limits the material removal rate (MRR). To solve this problem, potentiodynamic corrosion, potentiostatic corrosion and ECMP experiments were conducted at higher potentials to study the feasibility of the process. The results show that at 6 V vs. SCE, the roughness of a copper wafer was improved, with a MRR of about 0.9 mu m.min(-1), higher than that obtained at the conventional potential. A sample of the barrier film on the copper surface was collected and analyzed by energy dispersive spectroscopy (EDS), Fourier transform infrared spectroscopy (FTIR) and mass spectrometry to investigate the reaction mechanism. It is shown that the copper ions ionized from the working electrode (WE) react with two HEDP molecules to form the coordination compound [CuL2](6-), then K+ combines with [CuL2](6-) to produce the coordination compound [KCuL2](5-).