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个人信息Personal Information
教授
博士生导师
硕士生导师
任职 : 国际磨粒技术学会（International Committee of Abrasive Technology, ICAT）委员，中国机械工程学会极端制造分会副主任、生产工程分会常务委员、微纳米制造技术分会常务委员，中国机械工程学会生产工程分会磨粒加工技术专业委员会副主任、切削加工专业委员会常委委员、精密工程与微纳技术专业委员会常委委员，中国机械工程学会特种加工分会超声加工技术委员会副主任，中国机械工程学会摩擦学分会微纳制造摩擦学专业委员会常务委员，中国机械工业金属切削刀具协会切削先进制造技术研究会常务理事、对外学术交流工作委员会副主任、切削先进制造技术研究会自动化加工技术与系统委员会副主任。
性别：男
毕业院校：西北工业大学
学位：博士
所在单位：机械工程学院
学科：机械制造及其自动化. 机械电子工程. 航空宇航制造工程
办公地点：机械工程学院7191
电子邮箱：kangrk@dlut.edu.cn
Generation and removal of pits during chemical mechanical polishing process for MgO single crystal substrate
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论文类型：期刊论文
发表时间：2010-02-15
发表刊物：APPLIED SURFACE SCIENCE
收录刊物：SCIE、EI
卷号：256
期号：9
页面范围：2691-2699
ISSN号：0169-4332
关键字：MgO single crystal substrate; Chemical mechanical polishing; Chemical etching; Pit
摘要：Magnesium oxide (MgO) single crystal is an important substrate for high temperature superconductor, ferroelectric and photoelectric applications. The function and reliability of these devices are directly affected by the quality of polished MgO surface because any defect on the substrate, such as pit or scratch, may be propagated onto device level. In this paper, chemical mechanical polishing (CMP) experiments were conducted on MgO (1 0 0) substrate using slurry mainly comprised of 1-hydroxy ethylidene-11-diphosphonic acid (HEDP) and silica or ceria particles. Through monitoring the variations of the pits topography on substrate surface, generation and removal mechanism of the pits were investigated. The experimental results indicate that the pits were first generated by an indentation or scratch caused by particles in the slurry. If the rate of chemical etching in the defect area is higher than the material removal rate, the pits will grow. If chemical reaction in the defect area is slower than the material removal rate, the pits will become smaller and eventually disappear. Consequently, these findings may provide insight into strategies for minimizing pits during CMP process. (C) 2009 Elsevier B. V. All rights reserved.