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论文类型：期刊论文

发表时间：2009-01-01

发表刊物：Journal of Semiconductors

收录刊物：EI、CSCD、Scopus

卷号：30

期号：10

页面范围：59-62

ISSN号：1674-4926

摘要：According to Lambert's law, a novel structure of photodetectors, namely photodetectors in silicon-on-insulator, is proposed. By choosing a certain thickness value for the SOI layer, the photodetector can absorb blue/violet light effectively and affect the responsivity of the long wavelength in the visible and near-infrared region, making a blue/violet filter unnecessary. The material of the SOI layer is high-resistivity floating-zone silicon which can cause the neutral N type SOI layer to become fully depleted after doping with a P type impurity. This can improve the collection efficiency of short-wavelength photogenerated carriers. The device structure was optimized through numerical simulation, and the results show that the photodiode is a kind of high performance photodetector in the blue/violet region. ? 2009 Chinese Institute of Electronics.