点击次数：

论文类型：期刊论文

发表时间：2012-03-01

发表刊物：SCIENCE CHINA-TECHNOLOGICAL SCIENCES

收录刊物：SCIE、EI

卷号：55

期号：3

页面范围：600-605

ISSN号：1674-7321

关键字：nanoimprint stamp; replication; small critical dimension loss; nanoimprint lithography; multi-orientation patterns

摘要：In this paper, the replication process of large area nanoimprint stamp with small critical dimension (CD) loss was investigated, using the thin residual layer nanoimprint lithography (NIL) technology. The residual layer thickness was optimized by changing the spin-coated resist thickness. The dependences of the residual layer etching rate on gas flow, chamber pressure, and RF power were investigated, and the optimized process conditions were established. By means of the thin residual layer NIL technique and optimized residual layer etching process, large area stamp with small CD loss and multi-orientation patterns was successfully replicated on 2-inch SiO2/Si wafer. The CD loss was controlled within 5 nm. The replicated stamp showed high performance in the patterning with thermal NIL. The replication process reported in this work could also be used to fabricate large area nanostructures with small CD loss.