Percolation mechanism through trapping/de-trapping process at defect states for resistive switching devices with structure of Ag/SixC1-x/p-Si
Release Time:2019-10-22 Hits:
Indexed by: Journal Article
Date of Publication: 2014-08-14
Journal: JOURNAL OF APPLIED PHYSICS
Included Journals: EI、SCIE
Volume: 116
Issue: 6
ISSN: 0021-8979
Abstract: Pure SixC1-x (x > 0.5) and B-containing SixC1-x (x > 0.5) based resistive switching devices (RSD) with the structure of Ag/SixC(1-x)/p-Si were fabricated and their switching characteristics and mechanism were investigated systematically. Percolation mechanism through trapping/de-trapping at defect states was suggested for the switching process. Through the introduction of B atoms into SixC1-x, the density of defect states was reduced, then, the SET and RESET voltages were also decreased. Based on the percolation theory, the dependence of SET/RESET voltage on the density of defect states was analyzed. These results supply a deep understanding for the SiC-based RSD, which have a potential application in extreme ambient conditions. (C) 2014 AIP Publishing LLC.