Release Time:2019-10-22  Hits:

Indexed by: Journal Article

Date of Publication: 2014-01-27

Journal: APPLIED PHYSICS LETTERS

Included Journals: EI、SCIE

Volume: 104

Issue: 4

ISSN: 0003-6951

Abstract: Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network. (C) 2014 AIP Publishing LLC.