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论文类型：期刊论文

发表时间：2014-08-14

发表刊物：JOURNAL OF APPLIED PHYSICS

收录刊物：SCIE、EI

卷号：116

期号：6

ISSN号：0021-8979

摘要：Pure SixC1-x (x > 0.5) and B-containing SixC1-x (x > 0.5) based resistive switching devices (RSD) with the structure of Ag/SixC(1-x)/p-Si were fabricated and their switching characteristics and mechanism were investigated systematically. Percolation mechanism through trapping/de-trapping at defect states was suggested for the switching process. Through the introduction of B atoms into SixC1-x, the density of defect states was reduced, then, the SET and RESET voltages were also decreased. Based on the percolation theory, the dependence of SET/RESET voltage on the density of defect states was analyzed. These results supply a deep understanding for the SiC-based RSD, which have a potential application in extreme ambient conditions. (C) 2014 AIP Publishing LLC.