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发布时间：2019-10-22

论文类型：期刊论文

发表时间：2014-01-27

发表刊物：APPLIED PHYSICS LETTERS

收录刊物：EI、SCIE

卷号：104

期号：4

ISSN号：0003-6951

摘要：Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network. (C) 2014 AIP Publishing LLC.