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论文类型：期刊论文

发表时间：2017-10-01

发表刊物：MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS

收录刊物：Scopus、SCIE、EI

卷号：23

期号：10

页面范围：4709-4716

ISSN号：0946-7076

摘要：Large residual stress in the micro electroforming layer has been considered to be the main reason for causing warpage, delamination and micro cracking of the microdevice. These undesirable phenomena dramatically influence the productivity, dimensional accuracy and service life of the microdevice. Reasonable control of the residual stress is a direct and efficient way to improve the production rate of microdevice and expand the application of microdevice. In this paper, the residual stress finite element analysis (FEA) simulation model for Ni micro electroforming layer was established by the method of "Equivalent Reference Temperature (ERT)". The simulation result shows that the ERT for Ni micro electroforming layer is 238.15 K. The error of residual stress value is 0.37% between the simulation result and the experimental result. This error value proves the accuracy of the FEA model.