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Indexed by:期刊论文

Date of Publication:2008-10-01

Journal:CHINESE SCIENCE BULLETIN

Included Journals:SCIE、Scopus

Volume:53

Issue:19

Page Number:2931-2934

ISSN No.:1001-6538

Key Words:ZnO; diamond; MOCVD

Abstract:In this paper, ZnO films are deposited on freestanding thick diamond films (FTDF) by plasma-assisted metal organic chemical vapour deposition (MOCVD). Diethyl zinc (DEZn), O(2) and N(2)O are applied as precursors and different substrate temperatures are used to achieve high quality ZnO films. The influence of substrate temperature on the properties of ZnO films is systematically investigated by X-ray diffraction (XRD), Hall measurements and electron probe microanalysis (EPMA). Experimental results demonstrate that ZnO films deposited at 600 degrees C and 73 Pa display a fine electrical quality and Zn/O atomic ratio plays an important role in the electrical property of ZnO films.