Title of Paper:Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope

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Date of Publication:2018-11-01

Journal:JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Included Journals:SCIE

Volume:18

Issue:11

Page Number:7468-7472

ISSN No.:1533-4880

Key Words:InGaN; Microplates; mu-RDS

Abstract:InGaN thin film grown under In-rich condition by molecular beam epitaxy has been investigated by reflectance difference spectroscopy microscope. It is observed that InGaN "microplates" are formed just under the circular In droplets after chemical etching. Height fluctuation of those InGaN microplates is well perceived by normal reflectivity images. In addition, reflectance difference images are four-polar distribution patterns in those InGaN microplates, which indicates that the stress fields inside and outside of the microplates are both uniform. A qualitative growth mode is proposed to explain that uniform stress field distribution.