Professor
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
Academic Titles: 集成电路学院院长
Paper Publications
Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment
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Indexed by:Journal Article
Date of Publication:2013-09-01
Journal:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Included Journals:Scopus、EI、SCIE
Volume:24
Issue:9
Page Number:3299-3302
ISSN:0957-4522
Abstract:GaN epilayers were grown on the Si-terminated (0001) 6H-SiC substrates pre-treated by in situ H-2 in metal organic chemical vapor deposition system. It was found that in situ H-2 treatment brought a porous SiC surface. The influence of H-2 pre-treatment conditions on SiC surface was carefully investigated. Moreover, our experiment demonstrated that the H-2 pre-treatment can distinctly influence the GaN basic characteristics.