Indexed by:Journal Article

Date of Publication:2013-07-08

Journal:APPLIED PHYSICS LETTERS

Included Journals:Scopus、EI、SCIE

Volume:103

Issue:2

ISSN:0003-6951

Abstract:Vertically aligned ZnO nanowall networks were grown on p-GaN/sapphire substrates by metal-organic chemical vapor deposition, and further heterojunction light-emitting diodes based on n-ZnO/p-GaN were fabricated. Highly efficient ultraviolet-blue emission was observed from the diode under forward bias, and it operated continuously for 8.5 h with decay of only 8.08% under a continuous current of 12 mA. The diode exhibited low emission onset and good stability. In addition, temperature-dependent electroluminescence and current-voltage behaviors of the diode were investigated to examine the thermal effects on light output power, spectral line shift, and temperature sensitivity of the resulting voltage. (C) 2013 AIP Publishing LLC.