Indexed by:Journal Article

Date of Publication:2006-07-31

Journal:APPLIED PHYSICS LETTERS

Included Journals:Scopus、EI、SCIE

Volume:89

Issue:5

ISSN:0003-6951

Abstract:ZnO homojunction light-emitting diode was grown on single-crystal GaAs (100) substrate by ultrasonic spray pyrolysis. This diode was comprised of N-In codoped p-type ZnO and unintentionally doped n-type ZnO film. Ohmic contact on n-type ZnO layer and GaAs substrate was formed by Zn/Au and Au/Ge/Ni alloyed metal electrodes, respectively. An electroluminescence emission associated with defects was observed from the ZnO homojunction under forward current injection at room temperature. The I-V characteristics of the homojunction showed a threshold voltage of similar to 4 V under forward bias. (c) 2006 American Institute of Physics.