Indexed by:Journal Article

Date of Publication:2006-01-02

Journal:APPLIED PHYSICS LETTERS

Included Journals:EI、SCIE

Volume:88

Issue:1

ISSN:0003-6951

Abstract:FeSe thin films were grown on GaAs (001) substrates using low-pressure metalorganic chemical vapor deposition. X-ray diffraction analysis showed that FeSe thin films were in tetragonal structure with (002) orientation. It was found that the FeSe thin films were ferromagnetic above room temperature, revealing a maximum saturation magnetization about 590 emu/cc along the in-plane magnetic easy axis. The Hall measurement indicated that the as grown FeSe thin films was of p-type conduction with hole concentration of as high as 10(20)similar to 10(21) cm(-3). The magnetic circular dichroism spectrum was employed to study the electronic structure. (c) 2006 American Institute of Physics.