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High quality p-type ZnO films grown by low pressure plasma-assisted MOCVD with N2O rf plasma doping source

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Date of Publication:2022-10-03

Journal:JOURNAL OF MATERIALS PROCESSING TECHNOLOGY

Affiliation of Author(s):物理学院

Volume:204

Issue:1-3

Page Number:481-485

ISSN No.:0924-0136

Pre One:Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N-2 atmosphere

Next One:High-quality ZnO nanorods grown on graphite substrates by chemical solution method
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