Current position: Home >> Scientific Research >> Paper Publications

High quality p-type ZnO films grown by low pressure plasma-assisted MOCVD with N2O rf plasma doping source

Release Time:2022-10-03  Hits:

Date of Publication: 2022-10-03

Journal: JOURNAL OF MATERIALS PROCESSING TECHNOLOGY

Institution: 物理学院

Volume: 204

Issue: 1-3

Page Number: 481-485

ISSN: 0924-0136

Prev One:Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N-2 atmosphere

Next One:High-quality ZnO nanorods grown on graphite substrates by chemical solution method