Release Time:2022-10-03 Hits:
Date of Publication: 2022-10-03
Journal: JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS
Volume: 23
Issue: 2
Page Number: 542-545
ISSN: 0957-4522
Prev One:Influence of Nitridation Time on the Characteristics of GaN Films Deposited on Ni Metal Substrate by ECR-MOCVD
Next One:High quality p-type ZnO films grown by low pressure plasma-assisted MOCVD with N2O rf plasma doping source