Current position: Home >> Scientific Research >> Paper Publications

Influence of Nitridation Time on the Characteristics of GaN Films Deposited on Ni Metal Substrate by ECR-MOCVD

Release Time:2022-10-03  Hits:

Date of Publication: 2022-10-03

Journal: Advanced materials research

Institution: 物理学院

Volume: 912

Issue: 4

Page Number: 210-213

Prev One:Influence of N2 Flux on the Improvement of Highly c-oriented GaN Films on Diamond Substrates

Next One:Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N-2 atmosphere