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Influence of Nitridation Time on the Characteristics of GaN Films Deposited on Ni Metal Substrate by ECR-MOCVD

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Date of Publication:2022-10-03

Journal:Advanced materials research

Affiliation of Author(s):物理学院

Volume:912

Issue:4

Page Number:210-213

Pre One:Influence of N2 Flux on the Improvement of Highly c-oriented GaN Films on Diamond Substrates

Next One:Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N-2 atmosphere
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