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Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED

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Date of Publication:2022-10-03

Journal:APPLIED PHYSICS B LASERS AND OPTICS

Volume:109

Issue:4

Page Number:605-609

ISSN No.:0946-2171

Pre One:Growth and Characteristics of n-VO2/p-GaN based Heterojunctions

Next One:Growth of high c-orientated crystalline GaN films on amorphous Cu/glass substrates with low-temperature ECR-PEMOCVD
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