Current position: Home >> Scientific Research >> Paper Publications

Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure

Release Time:2022-10-04  Hits:

Date of Publication: 2022-10-03

Journal: JOURNAL OF LUMINESCENCE

Volume: 131

Issue: 4

Page Number: 825-828

ISSN: 0022-2313

Prev One:Ultraviolet electroluminescence from n-ZnO : Ga/p-ZnO : N homojunction device on sapphire substrate with p-type ZnO : N layer formed by annealing in N2O plasma ambient

Next One:VO2 Thermochromic Films on Quartz Glass Substrate Grown by RF-Plasma-Assisted Oxide Molecular Beam Epitaxy
Recommended Ph.D.Supervisor Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep