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Ultraviolet electroluminescence from n-ZnO : Ga/p-ZnO : N homojunction device on sapphire substrate with p-type ZnO : N layer formed by annealing in N2O plasma ambient

Release Time:2022-10-04  Hits:

Date of Publication: 2022-10-03

Journal: CHEMICAL PHYSICS LETTERS

Volume: 460

Issue: 4-6

Page Number: 548-551

ISSN: 0009-2614

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