Release Time:2022-10-07 Hits:
Date of Publication: 2022-10-07
Journal: APPLIED SURFACE SCIENCE
Institution: 物理学院
Volume: 389
Page Number: 199-204
ISSN: 0169-4332
Prev One:Nitride-oxide based p-n heterojunctions synthesized by depositing VO2film on p-GaN/sapphire substrate
Next One:A comparative study of intermediate layers for the growth of high crystalline GaN films on amorphous glass substrates with low-temperature ECR-PEMOCVD