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Indexed by:期刊论文

Date of Publication:2012-04-01

Journal:RARE METALS

Included Journals:SCIE、EI

Volume:31

Issue:2

Page Number:150-153

ISSN No.:1001-0521

Key Words:InN films; ECR-PEMOCVD; sapphire substrates; semiconductor devices

Abstract:InN films with highly c-axis preferred orientation were deposited on sapphire substrate by low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). Trimethyl indium (TMIn) and N-2 were applied as precursors of In and N, respectively. The quality of as-grown InN films were systematically investigated as a function of TMIn fluxes by means of reflection high-energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The results show that the dense and uniform InN films with highly c-axis preferred orientation are successfully achieved on sapphire substrates under optimized TMIn flux of 0.8 ml center dot min(-1). The InN films reported here will provide various opportunities for the development of high efficiency and high-performance semiconductor devices based on InN material.