Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2012-04-01

Journal: RARE METALS

Included Journals: EI、SCIE

Volume: 31

Issue: 2

Page Number: 150-153

ISSN: 1001-0521

Key Words: InN films; ECR-PEMOCVD; sapphire substrates; semiconductor devices

Abstract: InN films with highly c-axis preferred orientation were deposited on sapphire substrate by low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). Trimethyl indium (TMIn) and N-2 were applied as precursors of In and N, respectively. The quality of as-grown InN films were systematically investigated as a function of TMIn fluxes by means of reflection high-energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The results show that the dense and uniform InN films with highly c-axis preferred orientation are successfully achieved on sapphire substrates under optimized TMIn flux of 0.8 ml center dot min(-1). The InN films reported here will provide various opportunities for the development of high efficiency and high-performance semiconductor devices based on InN material.